gate turn-off
英 [ɡeɪt tɜːn ɒf]
美 [ɡeɪt tɜːrn ɔːf]
闸门电路断开
双语例句
- We researched mainly on Gate Turn-off Thyristor in qualitative analysis before.
以往对门极可关断晶闸管电流放大系数的研究主要集中在定性分析。 - High Power Gate Turn-Off Thyristor ( GTO)
大功率可关断晶闸管（GTO） - Introduces a new gate turn-off drive circuit of GTO thyristors, which can accomplish faster turn-off.
介绍了一种新型GTO门极关断电路，它可以实现GTO的快速关断。 - Study of power gate turn-off thyristor
大容量门极可关断晶闸管的研究 - He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor ( SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process.
研制出He离子注入局域寿命控制SOI横向绝缘栅双极晶体管（SOI－LIGBT），有效地提高了器件的关断速度，且与集成电路工艺相兼容。 - Gate commutated thyristor ( GCT) is a new high power semiconductor devices based on Gate turn-off thyristor ( GTO), GCT has extensive application foreground and it is a blank in interiorly now.
门极换流晶闸管（GCT）是在GTO的基础上开发的一种新型大功率半导体器件，有广阔应用的前景，目前在国内尚属空白。 - The control signals amplified by floating channel bootstrap drive circuits, then provide gate drive to Power MOSFET, through turn-on and turn-off the switches, to realize inverter.
由单片机发出的控制信号，经自举式浮充电路放大后给电力场效应管提供栅极驱动，通过开关器件的导通与关断，实现对直流电的逆变过程。